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STMicroelectronics STI24N60M2 MOSFETs

600V N-CH MOSFET 18A 168mR TO-262

8 ActiveSTMicroelectronicsTO-262 (I2PAK)$4.47
STI24N60M2 - No Image Available

Same model may have multiple batches, images only for reference.

STI24N60M2
Manufacturer
Part Number (MPN)
STI24N60M2
Detailed Description
600V N-CH MOSFET 18A 168mR TO-262
Package
TO-262 (I2PAK)
Lifecycle Status
Active
Datasheet
PDF STI24N60M2 Datasheet
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Technical Specifications

STMicroelectronics STI24N60M2 MOSFETs technical specifications.

General

Series
MDmesh™ II Plus
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
29 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
1060 pF @ 100 V
Power Dissipation Max
150W (Tc)

Alternate Parts Comparison (STI24N60M2 vs STI24NM60N vs STI47N60DM6AG vs STI6N80K5)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™ II Plus--MDmesh™ DM6SuperMESH5™
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA--TO-262-3 Long Leads, I2PAK, TO-262AATO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole--Through HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveObsolete
Current Continuous Drain ID 25 C18A (Tc)--36A (Tc)4.5A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss600 V--600 V800 V
Drive Voltage Max Rds on Min Rds on10V--10V10V
Fet TypeN-Channel--N-ChannelN-Channel
Gate Charge Qg Max Vgs29 nC @ 10 V--55 nC @ 10 V7.5 nC @ 10 V
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