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STMicroelectronics STGY50NC60WD BJTs

600V 110A IGBT Transistor, TO-247-3, 260W, Through Hole

20 ActiveSTMicroelectronicsTO-247-3$37.61
STGY50NC60WD - No Image Available

Same model may have multiple batches, images only for reference.

STGY50NC60WD
Manufacturer
Part Number (MPN)
STGY50NC60WD
Detailed Description
600V 110A IGBT Transistor, TO-247-3, 260W, Through Hole
Package
TO-247-3
Lifecycle Status
Active
Datasheet
PDF STGY50NC60WD Datasheet
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Technical Specifications

STMicroelectronics STGY50NC60WD BJTs technical specifications.

General

Series
PowerMESH™
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
195 nC
Td on Off 25 C
52ns/240ns
Test Condition
390V, 40A, 10Ohm, 15V
Reverse Recovery Time Trr
55 ns

Alternate Parts Comparison (STGY50NC60WD vs STGY40NC60VD vs MJE3055T vs ST13003)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough Hole--Through HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)--150°C (TJ)-65 °C ~ 150 °C
Number of Pins----33
RoHS----CompliantCompliant
Lifecycle StatusActive--ProductionProduction
China ROHS----Non-CompliantNon-Compliant
Collector Base Voltage Vcbo----70 V700 V
Collector Emitter Breakdown Voltage----60 V400 V
Collector Emitter Saturation Voltage----8 V3 V
Collector Emitter Voltage Vceo----60 V400 V
Current Rating----10 A1.5 A
Element Configuration----SingleSingle
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