STMicroelectronics STGWF30NC60S BJTs
30 A, 600 V, fast IGBT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGWF30NC60S
Detailed Description
30 A, 600 V, fast IGBT
Package
TO-3P-3 Full Pack
Lifecycle Status
Active
Datasheet
STGWF30NC60S Datasheet
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Technical Specifications
STMicroelectronics STGWF30NC60S BJTs technical specifications.
General
Series
PowerMESH™
Package / Case
TO-3P-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
IGBT 600V 35A 79W TO3P
Detailed Description
IGBT 600 V 35 A 79 W Through Hole TO-3P
Switching Energy
300µJ (on), 1.28mJ (off)
Input Type
Standard
Gate Charge
96 nC
Alternate Parts Comparison (STGWF30NC60S vs MJE3055T vs TIP31A vs ST13003)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -65 °C ~ 150 °C |
| Number of Pins | -- | 3 | 3 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Non-Compliant | Non-Compliant | Non-Compliant |
| Collector Base Voltage Vcbo | -- | 70 V | 60 V | 700 V |
| Collector Emitter Breakdown Voltage | -- | 60 V | 60 V | 400 V |
| Collector Emitter Saturation Voltage | -- | 8 V | 1.2 V | 3 V |
| Collector Emitter Voltage Vceo | -- | 60 V | 60 V | 400 V |
| Current Rating | -- | 10 A | 3 A | 1.5 A |
| Element Configuration | -- | Single | Single | Single |
| Action |
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ST13003STMicroelectronics400V 40W 1.5A 5@1A2V 1.5V@1.5A500mA NPN -40¡Í~+150¡Í@(Tj) SOT-32 Bipolar Transistors - BJT ROHS