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STMicroelectronics BU508AF BJTs

High voltage NPN power transistor for standard definition CRT display

252 ActiveSTMicroelectronicsTO-3P-3 Full Pack$1.91
BU508AF - No Image Available

Same model may have multiple batches, images only for reference.

BU508AF
Manufacturer
Part Number (MPN)
BU508AF
Detailed Description
High voltage NPN power transistor for standard definition CRT display
Package
TO-3P-3 Full Pack
Lifecycle Status
Active
Datasheet
PDF BU508AF Datasheet
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Technical Specifications

STMicroelectronics BU508AF BJTs technical specifications.

General

Package / Case
TO-3P-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
200µA
Dc Current Gain Hfe Min IC Vce
10 @ 100mA, 5V
Power Max
50 W
Transistor Type
NPN
Current Collector IC Max
8 A
Voltage Collector Emitter Breakdown Max
700 V

Alternate Parts Comparison (BU508AF vs BU931T vs BU931P vs BU941ZT)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-3P-3 Full PackTO-220-3TO-247-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)175°C (TJ)175°C (TJ)175°C (TJ)
Lifecycle StatusActiveObsoleteObsoleteObsolete
Current Collector Cutoff Max200µA100µA100µA100µA
Current Collector IC Max8 A10 A15 A15 A
Dc Current Gain Hfe Min IC Vce10 @ 100mA, 5V300 @ 5A, 10V300 @ 5A, 10V300 @ 5A, 10V
Description--------
Detailed Description--------
Power Max50 W125 W135 W150 W
Transistor TypeNPNNPN - DarlingtonNPN - DarlingtonNPN - Darlington
Vce Saturation Max Ib IC1V @ 1.6A, 4.5A1.8V @ 250mA, 10A1.8V @ 250mA, 10A1.8V @ 250mA, 10A
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