STMicroelectronics STGW8M120DF3 BJTs
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGW8M120DF3
Detailed Description
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Package
TO-247-3
Lifecycle Status
Active
Datasheet
STGW8M120DF3 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGW8M120DF3 BJTs technical specifications.
General
Series
M
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Switching Energy
390µJ (on), 370µJ (Off)
Input Type
Standard
Gate Charge
32 nC
Td on Off 25 C
20ns/126ns
Test Condition
600V, 8A, 33Ohm, 15V
Alternate Parts Comparison (STGW8M120DF3 vs STGW20NC60V vs STGW20IH125DF vs STGW30H65FB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 16 A | 60 A | 40 A | 30 A |
| Current Collector Pulsed Icm | 32 A | 100 A | 80 A | 120 A |
| Gate Charge | 32 nC | 100 nC | 68 nC | 149 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 167 W | 200 W | 259 W | 260 W |
| Switching Energy | 390µJ (on), 370µJ (Off) | 220µJ (on), 330µJ (off) | 410µJ (off) | 151µJ (on), 293µJ (off) |
| Td on Off 25 C | 20ns/126ns | 31ns/100ns | -/106ns | 37ns/146ns |
| Test Condition | 600V, 8A, 33Ohm, 15V | 390V, 20A, 3.3Ohm, 15V | 600V, 15A, 10Ohm, 15V | 400V, 30A, 10Ohm, 15V |
| Action |
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