STMicroelectronics STGW40M120DF3 BJTs
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGW40M120DF3
Detailed Description
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
Package
TO-247-3
Lifecycle Status
Active
Datasheet
STGW40M120DF3 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGW40M120DF3 BJTs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
125 nC
Td on Off 25 C
35ns/140ns
Test Condition
600V, 40A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
355 ns
Alternate Parts Comparison (STGW40M120DF3 vs STGW20NC60V vs STGW19NC60HD vs STGW20NC60VD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 80 A | 60 A | 42 A | 60 A |
| Current Collector Pulsed Icm | 160 A | 100 A | 60 A | 150 A |
| Gate Charge | 125 nC | 100 nC | 53 nC | 100 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 468 W | 200 W | 140 W | 200 W |
| Switching Energy | 1.5mJ (on), 2.25mJ (off) | 220µJ (on), 330µJ (off) | 85µJ (on), 189µJ (off) | 220µJ (on), 330µJ (off) |
| Td on Off 25 C | 35ns/140ns | 31ns/100ns | 25ns/97ns | 31ns/100ns |
| Test Condition | 600V, 40A, 10Ohm, 15V | 390V, 20A, 3.3Ohm, 15V | 390V, 12A, 10Ohm, 15V | 390V, 20A, 3.3Ohm, 15V |
| Action |
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