STMicroelectronics STGP4M65DF2 BJTs
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGP4M65DF2
Detailed Description
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Package
TO-220-3
Lifecycle Status
Active
Datasheet
STGP4M65DF2 Datasheet
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Technical Specifications
STMicroelectronics STGP4M65DF2 BJTs technical specifications.
General
Series
M
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Switching Energy
40µJ (on), 136µJ (off)
Input Type
Standard
Gate Charge
15.2 nC
Td on Off 25 C
12ns/86ns
Test Condition
400V, 4A, 47Ohm, 15V
Alternate Parts Comparison (STGP4M65DF2 vs STGP20M65DF2 vs STGP6NC60HD vs STGP19NC60HD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | M | M | PowerMESH™ | PowerMESH™ |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 8 A | 40 A | 15 A | 40 A |
| Current Collector Pulsed Icm | 16 A | 80 A | 21 A | 60 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Gate Charge | 15.2 nC | 63 nC | 13.6 nC | 53 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 68 W | 166 W | 56 W | 130 W |
| Action |
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