STMicroelectronics STGP30M65DF2 BJTs
Trench gate field-stop IGBT M series, 650 V 30 A low loss
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGP30M65DF2
Detailed Description
Trench gate field-stop IGBT M series, 650 V 30 A low loss
Package
TO-220-3
Lifecycle Status
Active
Datasheet
STGP30M65DF2 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGP30M65DF2 BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
80 nC
Td on Off 25 C
31.6ns/115ns
Test Condition
400V, 30A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Alternate Parts Comparison (STGP30M65DF2 vs STGP20NC60V vs STGP19NC60HD vs STGP19NC60KD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 60 A | 60 A | 40 A | 35 A |
| Current Collector Pulsed Icm | 120 A | 100 A | 60 A | 75 A |
| Gate Charge | 80 nC | 100 nC | 53 nC | 55 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 258 W | 200 W | 130 W | 125 W |
| Switching Energy | 300µJ (on), 960µJ (off) | 220µJ (on), 330µJ (off) | 85µJ (on), 189µJ (off) | 165µJ (on), 255µJ (off) |
| Td on Off 25 C | 31.6ns/115ns | 31ns/100ns | 25ns/97ns | 30ns/105ns |
| Test Condition | 400V, 30A, 10Ohm, 15V | 390V, 20A, 3.3Ohm, 15V | 390V, 12A, 10Ohm, 15V | 480V, 12A, 10Ohm, 15V |
| Action |
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