STMicroelectronics STGP10H60DF BJTs
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(3+Tab) TO-220AB Tube
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGP10H60DF
Detailed Description
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(3+Tab) TO-220AB Tube
Package
TO-220-3
Lifecycle Status
Active
Datasheet
STGP10H60DF Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGP10H60DF BJTs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
57 nC
Td on Off 25 C
19.5ns/103ns
Test Condition
400V, 10A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
107 ns
Alternate Parts Comparison (STGP10H60DF vs STGP20NC60V vs STGP19NC60HD vs STGP19NC60KD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 20 A | 60 A | 40 A | 35 A |
| Current Collector Pulsed Icm | 40 A | 100 A | 60 A | 75 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Gate Charge | 57 nC | 100 nC | 53 nC | 55 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 115 W | 200 W | 130 W | 125 W |
| Switching Energy | 83µJ (on), 140µJ (off) | 220µJ (on), 330µJ (off) | 85µJ (on), 189µJ (off) | 165µJ (on), 255µJ (off) |
| Action |
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