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STMicroelectronics STD10NM60ND MOSFETs

600V 8A N-CH MOSFET DPAK 600mR

2,500STMicroelectronicsSTD10NMDPAK$0.87
STD10NM60ND DPAK package illustration

Same model may have multiple batches, images only for reference.

STD10NM60ND
Manufacturer
Part Number (MPN)
STD10NM60ND
Base Model
Detailed Description
600V 8A N-CH MOSFET DPAK 600mR
Package
DPAK
Lifecycle Status
Last Time Buy
Datasheet
PDF STD10NM60ND Datasheet
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Ordering Code Family

STD10NM groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STD10NM60ND MOSFETs technical specifications.

General

Series
FDmesh™ II
RoHS
Yes
Number of Channels
1 Channel
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Last Time Buy
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
20 nC @ 10 V
Vgs Max
±25V

Alternate Parts Comparison (STD10NM60ND vs STD10NM60N vs STD80N6F7 vs STDRIVE601TR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK28-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 125°C (TJ)
Lifecycle StatusLast Time BuyActiveActiveActive
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)Power MOSFET, IGBT
SeriesFDmesh™ IIMDmesh™ IISTripFET™ F7--
Current Continuous Drain ID 25 C8A (Tc)10A (Tc)40A (Tc)--
Drain to Source Voltage Vdss600 V600 V60 V--
Drive Voltage Max Rds on Min Rds on10V10V10V--
Fet TypeN-ChannelN-ChannelN-Channel--
Gate Charge Qg Max Vgs20 nC @ 10 V19 nC @ 10 V25 nC @ 10 V--
Input Capacitance Ciss Max Vds577 pF @ 50 V540 pF @ 50 V1600 pF @ 30 V--
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