STMicroelectronics STBV32-AP BJTs
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STBV32-AP
Detailed Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Obsolete
Datasheet
STBV32-AP Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STBV32-AP BJTs technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector Cutoff Max
1mA
Dc Current Gain Hfe Min IC Vce
5 @ 1A, 2V
Power Max
1.5 W
Transistor Type
NPN
Current Collector IC Max
1.5 A
Voltage Collector Emitter Breakdown Max
400 V
Alternate Parts Comparison (STBV32-AP vs MJE3055T vs TIP31A vs ST13003)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -65 °C ~ 150 °C |
| Number of Pins | -- | 3 | 3 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Production | Production | Production |
| China ROHS | -- | Non-Compliant | Non-Compliant | Non-Compliant |
| Collector Base Voltage Vcbo | -- | 70 V | 60 V | 700 V |
| Collector Emitter Breakdown Voltage | -- | 60 V | 60 V | 400 V |
| Collector Emitter Saturation Voltage | -- | 8 V | 1.2 V | 3 V |
| Collector Emitter Voltage Vceo | -- | 60 V | 60 V | 400 V |
| Current Rating | -- | 10 A | 3 A | 1.5 A |
| Element Configuration | -- | Single | Single | Single |
| Action |
More Parts in BJTs
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