STMicroelectronics STB33N60DM2 MOSFETs
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STB33N60DM2
Base Model
Detailed Description
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
Package
TO-263 (D2PAK)
Lifecycle Status
Active
Datasheet
STB33N60DM2 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STB33N60DM2 MOSFETs technical specifications.
General
Series
MDmesh™ DM2
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
43 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
1870 pF @ 100 V
Power Dissipation Max
190W (Tc)
Alternate Parts Comparison (STB33N60DM2 vs STB33N60M2 vs STB33N65M2 vs STBB1-APUR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | 10-VFDFN Exposed Pad |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -40°C ~ 85°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Series | MDmesh™ DM2 | MDmesh™ II Plus | MDmesh™ M2 | -- |
| Current Continuous Drain ID 25 C | 24A (Tc) | 26A (Tc) | 24A (Tc) | -- |
| Drain to Source Voltage Vdss | 600 V | 600 V | 650 V | -- |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | 10V | -- |
| Fet Type | N-Channel | N-Channel | N-Channel | -- |
| Gate Charge Qg Max Vgs | 43 nC @ 10 V | 45.5 nC @ 10 V | 41.5 nC @ 10 V | -- |
| Input Capacitance Ciss Max Vds | 1870 pF @ 100 V | 1781 pF @ 100 V | 1790 pF @ 100 V | -- |
| Power Dissipation Max | 190W (Tc) | 190W (Tc) | 190W (Tc) | -- |
| Action |
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