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STMicroelectronics MD2001FX BJTs

High voltage NPN power transistor for standard definition CRT display

1,500 ActiveSTMicroelectronicsISOWATT218FX$2.12
MD2001FX ISOWATT218FX package illustration

Same model may have multiple batches, images only for reference.

MD2001FX
Manufacturer
Part Number (MPN)
MD2001FX
Detailed Description
High voltage NPN power transistor for standard definition CRT display
Package
ISOWATT218FX
Lifecycle Status
Active
Datasheet
PDF MD2001FX Datasheet
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Technical Specifications

STMicroelectronics MD2001FX BJTs technical specifications.

General

Package / Case
ISOWATT218FX
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
200µA
Dc Current Gain Hfe Min IC Vce
4.5 @ 6A, 5V
Power Max
58 W
Transistor Type
NPN
Current Collector IC Max
12 A
Voltage Collector Emitter Breakdown Max
700 V

Alternate Parts Comparison (MD2001FX vs MD1802FX vs MD1803DFX vs MJE3055T)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseISOWATT218FXISOWATT218FXTO-3P-3 Full PackTO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusActiveObsoleteObsoleteProduction
Current Collector Cutoff Max200µA200µA200µA700µA
Current Collector IC Max12 A10 A10 A10 A
Dc Current Gain Hfe Min IC Vce4.5 @ 6A, 5V5.5 @ 5A, 5V5.5 @ 5A, 5V20 @ 4A, 4V
Power Max58 W57 W57 W75 W
Transistor TypeNPNNPNNPNNPN
Vce Saturation Max Ib IC1.8V @ 1.5A, 6A1.5V @ 1.25A, 5A2V @ 1.25A, 5A8V @ 3.3A, 10A
Voltage Collector Emitter Breakdown Max700 V700 V700 V60 V
Grade--IndustrialIndustrialIndustrial
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