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STMicroelectronics HD1750FX BJTs

800V NPN BJT Transistor, 24A, 75W, Through Hole

85STMicroelectronicsISOWATT218FX$10.22
HD1750FX ISOWATT218FX package illustration

Same model may have multiple batches, images only for reference.

HD1750FX
Manufacturer
Part Number (MPN)
HD1750FX
Detailed Description
800V NPN BJT Transistor, 24A, 75W, Through Hole
Package
ISOWATT218FX
Lifecycle Status
Obsolete
Datasheet
PDF HD1750FX Datasheet
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Technical Specifications

STMicroelectronics HD1750FX BJTs technical specifications.

General

Package / Case
ISOWATT218FX
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector Cutoff Max
200µA
Dc Current Gain Hfe Min IC Vce
6.5 @ 12A, 5V
Power Max
75 W
Transistor Type
NPN
Current Collector IC Max
24 A
Voltage Collector Emitter Breakdown Max
800 V

Alternate Parts Comparison (HD1750FX vs MJE3055T vs ST13003 vs STN9360)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)-65 °C ~ 150 °C150°C (TJ)
Lifecycle StatusObsoleteProductionProductionProduction
Package / CaseISOWATT218FXTO-220-3--TO-261-4, TO-261AA
Current Collector Cutoff Max200µA700µA--10µA
Current Collector IC Max24 A10 A--500 mA
Dc Current Gain Hfe Min IC Vce6.5 @ 12A, 5V20 @ 4A, 4V--120 @ 20mA, 5V
Power Max75 W75 W--1.6 W
Transistor TypeNPNNPN--PNP
Vce Saturation Max Ib IC3V @ 3A, 12A8V @ 3.3A, 10A--500mV @ 10mA, 100mA
Voltage Collector Emitter Breakdown Max800 V60 V--600 V
Number of Pins--334
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