STMicroelectronics HD1750FX BJTs
800V NPN BJT Transistor, 24A, 75W, Through Hole
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
HD1750FX
Detailed Description
800V NPN BJT Transistor, 24A, 75W, Through Hole
Package
ISOWATT218FX
Lifecycle Status
Obsolete
Datasheet
HD1750FX Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics HD1750FX BJTs technical specifications.
General
Package / Case
ISOWATT218FX
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Description
TRANS NPN 800V 24A ISOWATT-218FX
Detailed Description
Bipolar (BJT) Transistor NPN 800 V 24 A 75 W Through Hole ISOWATT-218FX
Current Collector Cutoff Max
200µA
Dc Current Gain Hfe Min IC Vce
6.5 @ 12A, 5V
Power Max
75 W
Transistor Type
NPN
Alternate Parts Comparison (HD1750FX vs MJE3055T vs ST13003 vs STN9360)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | -65 °C ~ 150 °C | 150°C (TJ) |
| Number of Pins | -- | 3 | 3 | 4 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Active | Active | Active |
| China ROHS | -- | Non-Compliant | Non-Compliant | Non-Compliant |
| Collector Emitter Breakdown Voltage | -- | 60 V | 400 V | 600 V |
| Collector Emitter Saturation Voltage | -- | 8 V | 3 V | 500 mV |
| Collector Emitter Voltage Vceo | -- | 60 V | 400 V | 600 V |
| Emitter Base Voltage Vebo | -- | 5 V | 9 V | -7 V |
| Export Control Classification Number ECCN Code | -- | EAR99 | EAR99 | EAR99 |
| Hfe Min | -- | 5 | 5 | 120 |
| Action |
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