STMicroelectronics IRF820PBF MOSFETs
MOSFET N-CH 500V 4A TO-220
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF820PBF
Detailed Description
MOSFET N-CH 500V 4A TO-220
Package
TO-220AB-3
Lifecycle Status
Active
Datasheet
IRF820PBF Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics IRF820PBF MOSFETs technical specifications.
General
Series
IRF
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
2.5 A
Rds on Drain Source Resistance
3 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (IRF820PBF vs IRF530 vs IRF630 vs IRF640NPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | IRF | STripFET™ II | MESH OVERLAY™ II | -- |
| Mounting Type | Through Hole | Through Hole | Through Hole | -- |
| RoHS | Yes | -- | Yes | Yes |
| Package | TO-220AB-3 | -- | TO-220 | TO-220AB |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | -- |
| Lifecycle Status | -- | Obsolete | Active | Active |
| Action |
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STF23N80K5STMicroelectronicsN-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in TO-220FP package
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