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STMicroelectronics IRF630 MOSFETs

N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220

44 ActiveSTMicroelectronicsTO-220$1.90
IRF630 - No Image Available

Same model may have multiple batches, images only for reference.

IRF630
Manufacturer
Part Number (MPN)
IRF630
Detailed Description
N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF IRF630 Datasheet
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Technical Specifications

STMicroelectronics IRF630 MOSFETs technical specifications.

General

Series
MESH OVERLAY™ II
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
MOSFET N-CH 200V 9A TO220AB
Detailed Description
N-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
45 nC @ 10 V
Vgs Max
±20V

Alternate Parts Comparison (IRF630 vs STP180N4F6 vs STP315N10F7 vs STP120N4F6)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMESH OVERLAY™ IISTripFET™ F6DeepGATE™, STripFET™ VIIDeepGATE™, STripFET™ VI
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C9A (Tc)120A (Tc)180A (Tc)80A (Tc)
DescriptionMOSFET N-CH 200V 9A TO220ABMOSFET N-CHANNEL 40V 120A TO220MOSFET N-CH 100V 180A TO220MOSFET N-CH 40V 80A TO220AB
Detailed DescriptionN-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220N-Channel 40 V 120A (Tc) 190W (Tc) Through Hole TO-220N-Channel 100 V 180A (Tc) 315W (Tc) Through Hole TO-220N-Channel 40 V 80A (Tc) 110W (Tc) Through Hole TO-220
Drain to Source Voltage Vdss200 V40 V100 V40 V
Drive Voltage Max Rds on Min Rds on10V4.5V, 10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation Max75W (Tc)190W (Tc)315W (Tc)110W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
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