STMicroelectronics IRF630 MOSFETs

N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220

44 ActiveSTMicroelectronicsTO-220$1.90

Same model may have multiple batches, images only for reference.

IRF630

Manufacturer

STMicroelectronics

Part Number (MPN)

IRF630

Technical Specifications

STMicroelectronics IRF630 MOSFETs technical specifications.

General

Series

MESH OVERLAY™ II

Package / Case

TO-220-3

Mounting Type

Through Hole

Operating Temperature

-65°C ~ 150°C (TJ)

Lifecycle Status

Active

Vgs Th Max ID

4V @ 250µA

Gate Charge Qg Max Vgs

45 nC @ 10 V

Vgs Max

±20V

Input Capacitance Ciss Max Vds

700 pF @ 25 V

Power Dissipation Max

75W (Tc)

Alternate Parts Comparison (IRF630 vs STP180N4F6 vs STP315N10F7 vs STP120N4F6)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsIRF630	STMicroelectronicsSTP180N4F6	STMicroelectronicsSTP315N10F7	STMicroelectronicsSTP120N4F6
Series	MESH OVERLAY™ II	STripFET™ F6	DeepGATE™, STripFET™ VII	DeepGATE™, STripFET™ VI
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Lifecycle Status	Active	Active	Active	Active
Current Continuous Drain ID 25 C	9A (Tc)	120A (Tc)	180A (Tc)	80A (Tc)
Description	--	--	--	--
Detailed Description	--	--	--	--
Drain to Source Voltage Vdss	200 V	40 V	100 V	40 V
Drive Voltage Max Rds on Min Rds on	10V	4.5V, 10V	10V	10V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Power Dissipation Max	75W (Tc)	190W (Tc)	315W (Tc)	110W (Tc)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Action	RFQ	RFQ	RFQ	RFQ

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