STMicroelectronics IRF630 MOSFETs

N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220

44 ActiveSTMicroelectronicsTO-220$1.90

Same model may have multiple batches, images only for reference.

IRF630

Manufacturer

STMicroelectronics

Part Number (MPN)

IRF630

Technical Specifications

STMicroelectronics IRF630 MOSFETs technical specifications.

General

Series

MESH OVERLAY™ II

RoHS

Yes

Package / Case

TO-220-3

Mounting Type

Through Hole

Operating Temperature

-65°C ~ 150°C (TJ)

Lifecycle Status

Active

Vgs Th Max ID

4V @ 250µA

Gate Charge Qg Max Vgs

45 nC @ 10 V

Vgs Max

±20V

Input Capacitance Ciss Max Vds

700 pF @ 25 V

Alternate Parts Comparison (IRF630 vs STP180N4F6 vs STP315N10F7 vs STP120N4F6)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsIRF630	STMicroelectronicsSTP180N4F6	STMicroelectronicsSTP315N10F7	STMicroelectronicsSTP120N4F6
Series	MESH OVERLAY™ II	STripFET™ F6	DeepGATE™, STripFET™ VII	DeepGATE™, STripFET™ VI
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Lifecycle Status	Active	Active	Active	Active
Current Continuous Drain ID 25 C	9A (Tc)	120A (Tc)	180A (Tc)	80A (Tc)
Drain to Source Voltage Vdss	200 V	40 V	100 V	40 V
Drive Voltage Max Rds on Min Rds on	10V	4.5V, 10V	10V	10V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Grade	Industrial	Industrial	Automotive	Automotive
Power Dissipation Max	75W (Tc)	190W (Tc)	315W (Tc)	110W (Tc)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs Max	±20V	±20V	±20V	±20V
Action	RFQ	RFQ	RFQ	RFQ

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