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STMicroelectronics BUL128D-B BJTs

NPN Power Transistor, 400V VCEO, 4A IC, TO-220

83STMicroelectronicsTO-220-3$2.21
BUL128D-B - No Image Available

Same model may have multiple batches, images only for reference.

BUL128D-B
Manufacturer
Part Number (MPN)
BUL128D-B
Detailed Description
NPN Power Transistor, 400V VCEO, 4A IC, TO-220
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
PDF BUL128D-B Datasheet
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Technical Specifications

STMicroelectronics BUL128D-B BJTs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector Cutoff Max
250µA
Dc Current Gain Hfe Min IC Vce
12 @ 2A, 5V
Power Max
70 W
Transistor Type
NPN
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
400 V

Alternate Parts Comparison (BUL128D-B vs BUL58D vs BUL742C vs STGP20M65DF2)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Collector IC Max4 A8 A4 A40 A
Description--------
Detailed Description--------
Power Max70 W85 W70 W166 W
Voltage Collector Emitter Breakdown Max400 V450 V400 V650 V
Current Collector Cutoff Max250µA200µA250µA--
Dc Current Gain Hfe Min IC Vce12 @ 2A, 5V5 @ 5A, 5V25 @ 800mA, 3V--
Transistor TypeNPNNPNNPN--
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