STMicroelectronics BD535 BJTs
NPN BJT 60V 8A TO-220 Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD535
Detailed Description
NPN BJT 60V 8A TO-220 Transistor
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
BD535 Datasheet
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Technical Specifications
STMicroelectronics BD535 BJTs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Description
TRANS NPN 60V 8A TO-220
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 8 A 50 W Through Hole TO-220
Current Collector Cutoff Max
100µA
Dc Current Gain Hfe Min IC Vce
25 @ 2A, 2V
Power Max
50 W
Transistor Type
NPN
Alternate Parts Comparison (BD535 vs BD912 vs STGP20M65DF2 vs STGP19NC60HD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Collector IC Max | 8 A | 15 A | 40 A | 40 A |
| Description | TRANS NPN 60V 8A TO-220 | TRANS PNP 100V 15A TO-220 | IGBT TRENCH FS 650V 40A TO-220 | IGBT 600V 40A TO-220 |
| Detailed Description | Bipolar (BJT) Transistor NPN 60 V 8 A 50 W Through Hole TO-220 | Bipolar (BJT) Transistor PNP 100 V 15 A 3MHz 90 W Through Hole TO-220 | IGBT Trench Field Stop 650 V 40 A 166 W Through Hole TO-220 | IGBT 600 V 40 A 130 W Through Hole TO-220 |
| Power Max | 50 W | 90 W | 166 W | 130 W |
| Voltage Collector Emitter Breakdown Max | 60 V | 100 V | 650 V | 600 V |
| Action |
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