Solid State Manufacturing 2N3866 RF BJT
2N3866 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Silicon, NPN, TO-39 Microchip
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N3866
Detailed Description
2N3866 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Silicon, NPN, TO-39 Microchip
Package
TO-39-3
Lifecycle Status
Active
Datasheet
2N3866 Datasheet
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Technical Specifications
Solid State Manufacturing 2N3866 RF BJT technical specifications.
General
Series
2N3866
RoHS
Yes
Mounting Type
Through Hole
Transistor Polarity
NPN
Collector Emitter Voltage Vceo Max
30 V
Collector Base Voltage Vcbo
55 V
Pd Power Dissipation
5 W
Continuous Collector Current
400 mA
Technology
Si
Package
TO-39-3
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Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-39-3 | SOT143B | SC-82FL , MCPH-4 | -- |
| Package / Case | -- | TO-253-4, TO-253AA | 4-SMD, Flat Leads | SC-82A, SOT-343 |
| Operating Temperature | -- | -40°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | -- | Active | Obsolete | Active |
| Current Collector IC Max | -- | 30mA | 150mA | 30mA |
| Dc Current Gain Hfe Min IC Vce | -- | 60 @ 5mA, 8V | 60 @ 50mA, 5V | 160 @ 15mA, 3V |
| Frequency Transition | -- | 10.5GHz | 16GHz | 43GHz |
| Gain | -- | 18dB | 17.5dB | 11dB ~ 30.5dB |
| Noise Figure Db Typ F | -- | 1.1dB @ 1.8GHz | 1.2dB @ 1GHz | 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz |
| Power Max | -- | 450mW | 400mW | 100mW |
| Action |
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