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Solid State Manufacturing 2N3866 RF BJT

2N3866 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Silicon, NPN, TO-39 Microchip

In Stock ActiveSolid State ManufacturingTO-39-3
2N3866 TO-39-3 package illustration

Same model may have multiple batches, images only for reference.

2N3866
Part Number (MPN)
2N3866
Detailed Description
2N3866 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Silicon, NPN, TO-39 Microchip
Package
TO-39-3
Lifecycle Status
Active
Datasheet
PDF 2N3866 Datasheet
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Technical Specifications

Solid State Manufacturing 2N3866 RF BJT technical specifications.

General

Series
2N3866
RoHS
Yes
Mounting Type
Through Hole
Transistor Polarity
NPN
Collector Emitter Voltage Vceo Max
30 V
Collector Base Voltage Vcbo
55 V
Pd Power Dissipation
5 W
Continuous Collector Current
400 mA
Technology
Si
Package
TO-39-3

Related Parts Comparison (2N3866 vs BFU520XVL vs MCH4021-TL-E vs BFP720ESDH6327)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
PackageTO-39-3SOT143BSC-82FL , MCPH-4--
Package / Case--TO-253-4, TO-253AA4-SMD, Flat LeadsSC-82A, SOT-343
Operating Temperature---40°C ~ 150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle Status--ActiveObsoleteActive
Current Collector IC Max--30mA150mA30mA
Dc Current Gain Hfe Min IC Vce--60 @ 5mA, 8V60 @ 50mA, 5V160 @ 15mA, 3V
Frequency Transition--10.5GHz16GHz43GHz
Gain--18dB17.5dB11dB ~ 30.5dB
Noise Figure Db Typ F--1.1dB @ 1.8GHz1.2dB @ 1GHz0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
Power Max--450mW400mW100mW
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