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Samsung Semiconductor K4Y50084UE-JCB3 DRAM

Rambus DRAM, 64MX8, 35ns, CMOS, PBGA100

In Stock ActiveSamsung SemiconductorRoHS
K4Y50084UE-JCB3 - No Image Available

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K4Y50084UE-JCB3
Part Number (MPN)
K4Y50084UE-JCB3
Detailed Description
Rambus DRAM, 64MX8, 35ns, CMOS, PBGA100
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4Y50084UE-JCB3 Datasheet
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Technical Specifications

Samsung Semiconductor K4Y50084UE-JCB3 DRAM technical specifications.

General

RoHS
Yes
Number of Pins
100
Operating Temperature
0 ~ 100
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B100
Temperature Grade
OTHER
Supply Voltage Nom Vsup
1.8
Supply Current Max
1.02
Number of Words
67108864
Number of Words Code
64000000

Alternate Parts Comparison (K4Y50084UE-JCB3 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature0 ~ 100--0 ~ 95-25 ~ 85
Number of Pins100--7854
RoHSYes--CompliantYes
Access Time Max35----5.4
IO TypeCOMMON----COMMON
Jedec Package CodeR-PBGA-B100----R-PBGA-B54
Lead FreeYes----Yes
Memory IC TypeRAMBUS DRAM----SYNCHRONOUS DRAM
Military SpecFalse----False
Number of Words67108864----16777216
Number of Words Code64000000----16000000
Standby Current Max0.04----0.001
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