Samsung Semiconductor K4W2G1646E-BC11 DRAM
DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4W2G1646E-BC11
Detailed Description
DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96
Lifecycle Status
Active
Datasheet
K4W2G1646E-BC11 Datasheet
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Technical Specifications
Samsung Semiconductor K4W2G1646E-BC11 DRAM technical specifications.
General
Interface
DDR DRAM
Number of Pins
96
Operating Temperature
0 ~ 85
Supply Voltage
1.5
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B96
Temperature Grade
OTHER
Supply Current Max
0.189
Number of Words
134217728
Number of Words Code
128000000
Alternate Parts Comparison (K4W2G1646E-BC11 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | 0 ~ 85 | -- | 0 ~ 95 | -25 ~ 85 |
| Supply Voltage | 1.5 | -- | 1.425 ~ 1.575 | 3 |
| Interface | DDR DRAM | -- | SSTL_1.5 | SYNCHRONOUS DRAM |
| Number of Pins | 96 | -- | 78 | 54 |
| Package | -- | FBGA | BGA | FBGA-54 |
| Action |
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