Samsung Semiconductor K4T51163QE-ZCD5 DRAM
DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA90
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T51163QE-ZCD5
Detailed Description
DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA90
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4T51163QE-ZCD5 Datasheet
Quick Jump:
Technical Specifications
Samsung Semiconductor K4T51163QE-ZCD5 DRAM technical specifications.
General
Interface
DDR DRAM
RoHS
Yes
Number of Pins
90
Operating Temperature
0 ~ 95
Supply Voltage
1.8
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B90
Temperature Grade
OTHER
Supply Current Max
0.24
Number of Words
33554432
Alternate Parts Comparison (K4T51163QE-ZCD5 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Compliant | Yes |
| Package | BGA | FBGA | BGA | FBGA-54 |
| Operating Temperature | 0 ~ 95 | -- | 0 ~ 95 | -25 ~ 85 |
| Supply Voltage | 1.8 | -- | 1.425 ~ 1.575 | 3 |
| Interface | DDR DRAM | -- | SSTL_1.5 | SYNCHRONOUS DRAM |
| Number of Pins | 90 | -- | 78 | 54 |
| Memory Organization | 32MX16 | -- | 256Mx8 | 16MX16 |
| Action |
More Parts in DRAM
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
K4T51163QG-HCE6Samsung Semiconductor["Integrated Circuits (ICs)", "Memory", "Unclassified Memory"]
K4B2G0846D-HCH9Samsung Semiconductor["Integrated Circuits (ICs)", "Memory", "Unclassified Memory"]
K4B4G1646E-BCNBSamsung Semiconductor["Integrated Circuits (ICs)", "Memory", "Unclassified Memory"]