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Samsung Semiconductor K4T51163QE-ZCD5 DRAM

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA90

In Stock ActiveSamsung SemiconductorBGARoHS
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K4T51163QE-ZCD5
Part Number (MPN)
K4T51163QE-ZCD5
Detailed Description
DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA90
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4T51163QE-ZCD5 Datasheet
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Technical Specifications

Samsung Semiconductor K4T51163QE-ZCD5 DRAM technical specifications.

General

RoHS
Yes
Number of Pins
90
Operating Temperature
0 ~ 95
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B90
Temperature Grade
OTHER
Supply Voltage Nom Vsup
1.8
Supply Current Max
0.24
Number of Words
33554432
Number of Words Code
32000000

Alternate Parts Comparison (K4T51163QE-ZCD5 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature0 ~ 95--0 ~ 95-25 ~ 85
Number of Pins90--7854
RoHSYesTrueCompliantYes
Access Time Max0.5----5.4
Clock Frequency Max Fclk266----133
IO TypeCOMMON----COMMON
Jedec Package CodeR-PBGA-B90----R-PBGA-B54
Lead FreeYes----Yes
Memory IC TypeDDR DRAM----SYNCHRONOUS DRAM
Military SpecFalse----False
Number of Words33554432----16777216
Number of Words Code32000000----16000000
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