Samsung Semiconductor K4S641632H-TC60 DRAM
DRAM Memory IC 64Mb 166MHz 3.3V TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4S641632H-TC60
Detailed Description
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Package
TSOP
Lifecycle Status
Active
RoHS State
No
Datasheet
K4S641632H-TC60 Datasheet
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Technical Specifications
Samsung Semiconductor K4S641632H-TC60 DRAM technical specifications.
General
Interface
SYNCHRONOUS DRAM
RoHS
No
Number of Pins
54
Package / Case
TSOP
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 70°C
Supply Voltage
3.3V
Access Time Max
5ns
Address Bus Width
14b
Density
64Mb
Alternate Parts Comparison (K4S641632H-TC60 vs K4S281632K-UC75 vs K4S641632K-UI60 vs K4S281632I-UC75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TSOP | TSOP | TSOP | TSOP |
| RoHS | No | Yes | Compliant | Yes |
| Frequency | -- | 133MHz | 166MHz | 133MHz |
| Access Time | -- | 7.5ns | 6ns | 7.5ns |
| Lead Free | -- | Lead Free | Lead Free | Lead Free |
| Action |
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