Samsung Semiconductor K4S561632N-LC75 DRAM
DRAM Memory IC 256Mb 133MHz 3.3V TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4S561632N-LC75
Detailed Description
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
Package
TSOP
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
K4S561632N-LC75 Datasheet
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Technical Specifications
Samsung Semiconductor K4S561632N-LC75 DRAM technical specifications.
General
RoHS
Yes
Number of Pins
54
Package / Case
TSOP
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 70°C
Supply Voltage
3.3V
Lifecycle Status
Obsolete
Address Bus Width
15b
Density
256Mb
Lead Free
Lead Free
Related Parts Comparison (K4S561632N-LC75 vs K4S281632K-UC75 vs K4S641632K-UI60 vs K4S281632I-UC75)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TSOP | TSOP | TSOP | TSOP |
| RoHS | Yes | Yes | Compliant | Yes |
| Lead Free | Lead Free | Lead Free | Lead Free | Lead Free |
| Frequency | -- | 133MHz | 166MHz | 133MHz |
| Access Time | -- | 7.5ns | 6ns | 7.5ns |
| Action |
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