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Samsung Semiconductor K4S561632N-LC75 DRAM

DRAM Memory IC 256Mb 133MHz 3.3V TSOP

15,000Samsung SemiconductorTSOP$11.04RoHS
K4S561632N-LC75 TSOP package illustration

Same model may have multiple batches, images only for reference.

K4S561632N-LC75
Part Number (MPN)
K4S561632N-LC75
Detailed Description
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
Package
TSOP
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF K4S561632N-LC75 Datasheet
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Technical Specifications

Samsung Semiconductor K4S561632N-LC75 DRAM technical specifications.

General

RoHS
Yes
Number of Pins
54
Package / Case
TSOP
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 70°C
Supply Voltage
3.3V
Lifecycle Status
Obsolete
Address Bus Width
15b
Density
256Mb
Lead Free
Lead Free

Alternate Parts Comparison (K4S561632N-LC75 vs K4S281632K-UC75 vs K4S641632K-UI60 vs K4S281632I-UC75)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTSOPTSOPTSOPTSOP
RoHSYesYesCompliantYes
Lead FreeLead FreeLead FreeLead FreeLead Free
Frequency--133MHz166MHz133MHz
Access Time--7.5ns6ns7.5ns
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