Samsung Semiconductor K4H561638F-TCB3 DRAM
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4H561638F-TCB3
Detailed Description
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Package
TSOP
Key Features
Package / Case: TSOP; Supply Voltage: 2.5V
Lifecycle Status
Active
RoHS State
No
Datasheet
K4H561638F-TCB3 Datasheet
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Technical Specifications
Samsung Semiconductor K4H561638F-TCB3 DRAM technical specifications.
General
RoHS
No
Package / Case
TSOP
Operating Temperature
0°C ~ 70°C
Supply Voltage
2.5V
Access Time
0.7ns
Address Bus Width
15b
Density
256Mb
Max Frequency
333MHz
Alternate Parts Comparison (K4H561638F-TCB3 vs K4H511638C-UCB3 vs K4H511638D-UCCC vs K4H561638F-UCB3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TSOP | TSOP | TSOP | TSOP |
| RoHS | No | Yes | Yes | Yes |
| Operating Temperature | 0°C ~ 70°C | -- | -- | -- |
| Supply Voltage | 2.5V | -- | -- | -- |
| Access Time | 0.7ns | -- | -- | -- |
| Address Bus Width | 15b | -- | -- | -- |
| Density | 256Mb | -- | -- | -- |
| Max Frequency | 333MHz | -- | -- | -- |
| Frequency | -- | 166MHz | 200MHz | 166MHz |
| Lead Free | -- | Lead Free | Lead Free | Lead Free |
| Action |
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