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Samsung Semiconductor K4S561632C-TC75000 DRAM

DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R

2,009 ActiveSamsung SemiconductorTSOP$2.62RoHS
K4S561632C-TC75000 - No Image Available

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K4S561632C-TC75000
Part Number (MPN)
K4S561632C-TC75000
Detailed Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R
Package
TSOP
Key Features
Package / Case: TSOP; Supply Voltage: 3.3V
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4S561632C-TC75000 Datasheet
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Technical Specifications

Samsung Semiconductor K4S561632C-TC75000 DRAM technical specifications.

General

Data Bus Width
16b
RoHS
Compliant
Package / Case
TSOP
Operating Temperature
0°C ~ 70°C
Supply Voltage
3.3V
Address Bus Width
15b
Density
256Mb
Max Frequency
133MHz
Radiation Hardening
No

Alternate Parts Comparison (K4S561632C-TC75000 vs K4S281632K-UC75 vs K4S641632K-UI60 vs K4S281632I-UC75)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTSOPTSOPTSOPTSOP
RoHSCompliantYesCompliantYes
Frequency--133MHz166MHz133MHz
Access Time--7.5ns6ns7.5ns
Lead Free--Lead FreeLead FreeLead Free
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