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Samsung Semiconductor K4S560832A-TC75 DRAM

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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K4S560832A-TC75
Part Number (MPN)
K4S560832A-TC75
Detailed Description
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Lifecycle Status
Active
RoHS State
No
Datasheet
PDF K4S560832A-TC75 Datasheet
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Technical Specifications

Samsung Semiconductor K4S560832A-TC75 DRAM technical specifications.

General

RoHS
No
Number of Pins
54
Operating Temperature
0 ~ 70
Terminal Position
DUAL
Jedec Package Code
R-PDSO-G54
Width
10.16
Length
22.22
Number of Functions
1
Temperature Grade
COMMERCIAL
Supply Voltage Nom Vsup
3.3

Alternate Parts Comparison (K4S560832A-TC75 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature0 ~ 70--0 ~ 95-25 ~ 85
Number of Pins54--7854
RoHSNo--CompliantYes
Access Time Max5.4----5.4
Clock Frequency Max Fclk133----133
IO TypeCOMMON----COMMON
Jedec Package CodeR-PDSO-G54----R-PBGA-B54
Lead FreeNo----Yes
Length22.22----11
Memory IC TypeSYNCHRONOUS DRAM----SYNCHRONOUS DRAM
Military SpecFalse----False
Number of Functions1----1
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