Samsung Semiconductor K4N51163QE-ZC25 DRAM
Cache DRAM Module, 32MX16, 0.4ns, CMOS, PBGA84
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4N51163QE-ZC25
Detailed Description
Cache DRAM Module, 32MX16, 0.4ns, CMOS, PBGA84
Package
FBGA84
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4N51163QE-ZC25 Datasheet
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Technical Specifications
Samsung Semiconductor K4N51163QE-ZC25 DRAM technical specifications.
General
Interface
CACHE DRAM MODULE
RoHS
Yes
Number of Pins
84
Operating Temperature
0 ~ 85
Supply Voltage
1.8
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B84
Temperature Grade
OTHER
Supply Current Max
0.28
Number of Words
33554432
Alternate Parts Comparison (K4N51163QE-ZC25 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Compliant | Yes |
| Package | FBGA84 | FBGA | BGA | FBGA-54 |
| Operating Temperature | 0 ~ 85 | -- | 0 ~ 95 | -25 ~ 85 |
| Supply Voltage | 1.8 | -- | 1.425 ~ 1.575 | 3 |
| Interface | CACHE DRAM MODULE | -- | SSTL_1.5 | SYNCHRONOUS DRAM |
| Number of Pins | 84 | -- | 78 | 54 |
| Memory Organization | 32MX16 | -- | 256Mx8 | 16MX16 |
| Action |
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