Samsung Semiconductor K4F6E3S4HM-MGCJ DRAM
DRAM Memory IC 16Gbit Parallel 1866 MHz 1.1V 200-TFBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4F6E3S4HM-MGCJ
Detailed Description
LPDDR4 16Gb x32 3733 Mbps 1.1v
Package
200-TFBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4F6E3S4HM-MGCJ Datasheet
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Technical Specifications
Samsung Semiconductor K4F6E3S4HM-MGCJ DRAM technical specifications.
General
Memory Size
16Gbit
RoHS
ROHS3 Compliant
Number of Pins
200
Package / Case
200-TFBGA
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
-25°C ~ 85°C
Supply Voltage
1.1V
Lifecycle Status
Active
Max Frequency
1866 MHz
Related Parts Comparison (K4F6E3S4HM-MGCJ vs K4B2G1646Q-BCMA vs K4M561633G-BN75 vs K4B2G0846D-HCH9)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | ROHS3 Compliant | Yes | Yes | Compliant |
| Operating Temperature | -25°C ~ 85°C | -- | -25 ~ 85 | 0 ~ 95 |
| Supply Voltage | 1.1V | -- | 3 | 1.425 ~ 1.575 |
| Number of Pins | 200 | -- | 54 | 78 |
| Memory Organization | 512M x 32 | -- | 16MX16 | 256Mx8 |
| Package | -- | FBGA | FBGA-54 | BGA |
| Action |
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