Samsung Semiconductor K4B2G0446C-HCH9 DRAM
DDR DRAM, 512MX4, CMOS, PBGA78,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B2G0446C-HCH9
Detailed Description
DDR DRAM, 512MX4, CMOS, PBGA78,
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4B2G0446C-HCH9 Datasheet
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Technical Specifications
Samsung Semiconductor K4B2G0446C-HCH9 DRAM technical specifications.
General
Interface
DDR DRAM
RoHS
Yes
Number of Pins
78
Operating Temperature
0 ~ 85
Supply Voltage
1.5
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B78
Temperature Grade
OTHER
Supply Current Max
0.2
Number of Words
536870912
Related Parts Comparison (K4B2G0446C-HCH9 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Compliant | Yes |
| Package | BGA | FBGA | BGA | FBGA-54 |
| Operating Temperature | 0 ~ 85 | -- | 0 ~ 95 | -25 ~ 85 |
| Supply Voltage | 1.5 | -- | 1.425 ~ 1.575 | 3 |
| Interface | DDR DRAM | -- | SSTL_1.5 | SYNCHRONOUS DRAM |
| Number of Pins | 78 | -- | 78 | 54 |
| Memory Organization | 512MX4 | -- | 256Mx8 | 16MX16 |
| Action |
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