ROHM UT6MA3TCR MOSFETs
MOSFET N/P-CH 20V 5A HUML2020L8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
UT6MA3TCR
Detailed Description
MOSFET N/P-CH 20V 5A HUML2020L8
Package
6-PowerUDFN
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
ROHM UT6MA3TCR MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
5.5 A, 5 A
Rds on Drain Source Resistance
30 mOhms, 42 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Threshold Voltage
500 mV, 1.5 V
Alternate Parts Comparison (UT6MA3TCR vs UT6JA3TCR vs UT6K3TCR vs RUM002N02T2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 1 Channel |
| RoHS | Yes | Compliant | ROHS3 Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | 2 P-Channel (Dual) | 2 N-Channel (Dual) | Single |
| Fall Time | 5.5 ns, 30 ns | 30 ns | 5.1 ns | 10 ns |
| Forward Transconductance Min | 3.1 S, 4.1 S | 4.1 S | 2.3 S | 200 mS |
| Pd Power Dissipation | 2 W | 2 W | 2 W | 150 mW |
| Rds on Drain Source Resistance | 30 mOhms, 42 mOhms | 59 mOhms | 42 mOhms | 1.2 Ohms |
| Rise Time | 5.9 ns, 36 ns | 36 ns | 5.8 ns | 10 ns |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Transistor Polarity | N-Channel, P-Channel | P-Channel | N-Channel | N-Channel |
| Action |
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