ROHM SH8K32TB1 MOSFETs
MOSFET 2N-CH 60V 4.5A 8SOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SH8K32TB1
Detailed Description
MOSFET 2N-CH 60V 4.5A 8SOP
Package
SOP-8
Lifecycle Status
Active
Datasheet
SH8K32TB1 Datasheet
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Technical Specifications
ROHM SH8K32TB1 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
+ 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
4.5 A
Rds on Drain Source Resistance
55 mOhms
Pd Power Dissipation
2 W
Forward Transconductance Min
4 S
Alternate Parts Comparison (SH8K32TB1 vs SH8M41TB1 vs SH8M12TB1 vs SH8MA3TB1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | Surface Mount |
| Operating Temperature | + 150°C | 150°C (TJ) | - 55°C ~ + 150°C | 150°C (TJ) |
| RoHS | Yes | ROHS3 Compliant | Yes | Compliant |
| Package | SOP-8 | Tape & Reel (TR) | 8-SOP | Tape & Reel (TR) |
| Pd Power Dissipation | 2 W | 2 W | 2 W | 2.8 W |
| Rds on Drain Source Resistance | 55 mOhms | 130 mOhms, 240 mOhms | 30 mOhms, 40 mOhms | 28 mOhms, 50 mOhms |
| Technology | Si | MOSFET (Metal Oxide) | Si | MOSFET (Metal Oxide) |
| Transistor Polarity | N-Channel | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel, P-Channel |
| Unit Weight | 0.002926 oz | 0.002926 oz | 0.002926 oz | 0.002926 oz |
| Vds Drain Source Breakdown Voltage | 60 V | 80 V, 80 V | 30 V | 30 V, 30 V |
| Forward Transconductance Min | 4 S | 2 S, 3 S | -- | 2.7 S, 3.3 S |
| ID Continuous Drain Current | 4.5 A | -- | 5 A, 4.5 A | 7 A, 6 A |
| Action |
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