ROHM SCT3120ALGC11 MOSFETs
SICFET N-CH 650V 21A TO247N
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT3120ALGC11
Detailed Description
SICFET N-CH 650V 21A TO247N
Package
TO-247-3
Lifecycle Status
Active
Datasheet
SCT3120ALGC11 Datasheet
Quick Jump:
Technical Specifications
ROHM SCT3120ALGC11 MOSFETs technical specifications.
General
Series
SCT3x
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
650 V
ID Continuous Drain Current
21 A
Rds on Drain Source Resistance
120 mOhms
Vgs Gate Source Voltage
- 4 V, + 22 V
Alternate Parts Comparison (SCT3120ALGC11 vs SCT2080KEGC11 vs SCT3030KLHRC11 vs SCT2080KEHRC11)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 14 ns | 22 ns | 29 ns | 22 ns |
| ID Continuous Drain Current | 21 A | 40 A | 72 A | 40 A |
| Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Pd Power Dissipation | 103 W | 262 W | 339 W | 262 W |
| Qg Gate Charge | 38 nC | 106 nC | 131 nC | 106 nC |
| Rds on Drain Source Resistance | 120 mOhms | 80 mOhms | 30 mOhms | 80 mOhms |
| Rise Time | 21 ns | 36 ns | 42 ns | 36 ns |
| Action |
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