ROHM SCT2080KEGC11 MOSFETs
MOSFET N-CH 1200V 40A TO247N
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT2080KEGC11
Detailed Description
MOSFET N-CH 1200V 40A TO247N
Package
TO-247-3
Lifecycle Status
Active
Datasheet
SCT2080KEGC11 Datasheet
Quick Jump:
Technical Specifications
ROHM SCT2080KEGC11 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
+ 175°C
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.2 kV
ID Continuous Drain Current
40 A
Rds on Drain Source Resistance
80 mOhms
Vgs Gate Source Voltage
- 6 V, + 22 V
Alternate Parts Comparison (SCT2080KEGC11 vs SCT3030ALHRC11 vs SCT3160KLGC11 vs SCT3080KLGC11)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 22 ns | 27 ns | 25 ns | 24 ns |
| ID Continuous Drain Current | 40 A | 70 A | 17 A | 31 A |
| Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Pd Power Dissipation | 262 W | 262 W | 103 W | 165 W |
| Qg Gate Charge | 106 nC | 104 nC | 42 nC | 60 nC |
| Rds on Drain Source Resistance | 80 mOhms | 30 mOhms | 160 mOhms | 80 mOhms |
| Rise Time | 36 ns | 41 ns | 18 ns | 22 ns |
| Action |
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