ROHM RU1L002SNTL MOSFETs
MOSFET N-CH 60V 250MA UMT3F
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RU1L002SNTL
Detailed Description
MOSFET N-CH 60V 250MA UMT3F
Package
SOT-323-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
ROHM RU1L002SNTL MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
250 mA
Rds on Drain Source Resistance
2.4 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
1 V
Alternate Parts Comparison (RU1L002SNTL vs RU1C001UNTCL vs RU1C002ZPTCL vs RAL045P01TCR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 28 ns | 38 ns | 17 ns | 150 ns |
| ID Continuous Drain Current | 250 mA | 100 mA | 200 mA | 4.5 A |
| Package | SOT-323-3 | SOT-323-3 | SOT-323-3 | SOT-323-3 |
| Pd Power Dissipation | 200 mW | 150 mW | 150 mW | 1 W |
| Rds on Drain Source Resistance | 2.4 Ohms | 2.5 Ohms | 1.2 Ohms | 22 mOhms |
| Rise Time | 5 ns | 4 ns | 4 ns | 60 ns |
| Technology | Si | Si | Si | Si |
| Action |
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