ROHM RHU002N06T106 MOSFETs
MOSFET N-CH 60V 200MA UMT3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RHU002N06T106
Base Model
Detailed Description
MOSFET N-CH 60V 200MA UMT3
Package
SOT-323-3
Lifecycle Status
Active
Datasheet
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Technical Specifications
ROHM RHU002N06T106 MOSFETs technical specifications.
General
Series
RHU002N06
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
200 mA
Rds on Drain Source Resistance
2.8 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (RHU002N06T106 vs RHU002N06FRAT106 vs RHU003N03T106 vs RUM002N02T2L)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 8 ns | 95 ns | 6 ns | 10 ns |
| Package | SOT-323-3 | SC-70,SOT-323 | SOT-323-3 | SOT-23 |
| Pd Power Dissipation | 200 mW | 200 mW | 200 mW | 150 mW |
| Rds on Drain Source Resistance | 2.8 Ohms | 2.4 Ohms | 1.4 Ohms | 1.2 Ohms |
| Rise Time | 8 ns | 5 ns | 6 ns | 10 ns |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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