ROHM RS1G201ATTB1 MOSFETs
MOSFET P-CH 40V 20A/78A 8HSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RS1G201ATTB1
Detailed Description
MOSFET P-CH 40V 20A/78A 8HSOP
Package
8-PowerTDFN
Lifecycle Status
Active
Datasheet
RS1G201ATTB1 Datasheet
Quick Jump:
Technical Specifications
ROHM RS1G201ATTB1 MOSFETs technical specifications.
General
RoHS
Compliant
Number of Pins
8
Number of Channels
1 Channel
Package / Case
8-PowerTDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Channel Mode
Enhancement
Channel Type
P
Alternate Parts Comparison (RS1G201ATTB1 vs RS1E260ATTB1 vs RS1E220ATTB1 vs RS1E130GNTB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Compliant | Yes | Yes | ROHS3 Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single Quad Drain Triple Source | Single | Single | Single |
| Fall Time | 250 ns | 320 ns | 140 ns | 3.1 ns |
| Pd Power Dissipation | 40 W | 40 W | 34 W | 22 W |
| Qg Gate Charge | 130 nC | 175 nC | 130 nC | 7.9 nC |
| Rds on Drain Source Resistance | 5.2 mOhms | 3.1 mOhms | 4.1 mOhms | 11.7 mOhms |
| Rise Time | 98 ns | 78 ns | 40 ns | 4.3 ns |
| Technology | MOSFET (Metal Oxide) | Si | Si | MOSFET (Metal Oxide) |
| Transistor Polarity | P-Channel | P-Channel | P-Channel | N-Channel |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
NVMFS3D0P04M8LT1GonsemiSimilaronsemi
Pin YesPkg YesElec Mixed
MV8 P INITIAL PROGRAM
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