ROHM RS1E260ATTB1 MOSFETs
MOSFET P-CH 30V 26A/80A 8HSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RS1E260ATTB1
Detailed Description
MOSFET P-CH 30V 26A/80A 8HSOP
Package
8-PowerTDFN
Lifecycle Status
Active
Datasheet
RS1E260ATTB1 Datasheet
Quick Jump:
Technical Specifications
ROHM RS1E260ATTB1 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
80 A
Rds on Drain Source Resistance
3.1 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
1 V
Alternate Parts Comparison (RS1E260ATTB1 vs RS1E130GNTB vs RS1G120MNTB vs RS1L151ATTB1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | ROHS3 Compliant | ROHS3 Compliant | Compliant with Exemption |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single Quad Drain Triple Source |
| Fall Time | 320 ns | 3.1 ns | 3.2 ns | 220 ns |
| Pd Power Dissipation | 40 W | 22 W | 25 W | 40 W |
| Qg Gate Charge | 175 nC | 7.9 nC | 9.4 nC | 130 nC |
| Rds on Drain Source Resistance | 3.1 mOhms | 11.7 mOhms | 16.2 mOhms | 11.3 mOhms |
| Rise Time | 78 ns | 4.3 ns | 4.3 ns | 70 ns |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Transistor Polarity | P-Channel | N-Channel | N-Channel | P-Channel |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
