ROHM RGT50NL65DGTL BJTs
IGBT TRENCH FIELD 650V 48A LPDS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RGT50NL65DGTL
Detailed Description
IGBT TRENCH FIELD 650V 48A LPDS
Package
TO-263-3
Lifecycle Status
Active
Datasheet
RGT50NL65DGTL Datasheet
Quick Jump:
Technical Specifications
ROHM RGT50NL65DGTL BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 40°C ~ + 175°C
Technology
Si
Configuration
Single
Collector Emitter Voltage Vceo Max
650 V
Collector Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
- 30 V, 30 V
Continuous Collector Current at 25 C
48 A
Pd Power Dissipation
194 W
Alternate Parts Comparison (RGT50NL65DGTL vs RGT30NS65DGTL vs RGT40NS65DGTL vs RGT80TS65DGC13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | Through Hole |
| Operating Temperature | - 40°C ~ + 175°C | - 40°C ~ + 175°C | - 40°C ~ + 175°C | - 40°C ~ + 175°C |
| RoHS | Yes | Yes | Yes | Yes |
| Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | 1.65 V | 1.65 V |
| Collector Emitter Voltage Vceo Max | 650 V | 650 V | 650 V | 650 V |
| Configuration | Single | Single | Single | Single |
| Continuous Collector Current at 25 C | 48 A | 30 A | 40 A | 70 A |
| Gate Emitter Leakage Current | 200 nA | +/- 200 nA | +/- 200 nA | 200 nA |
| Maximum Gate Emitter Voltage | - 30 V, 30 V | - 30 V, 30 V | - 30 V, 30 V | - 30 V, 30 V |
| Package | TO-263-3 | D2PAK-3 | D2PAK-3 (TO-263-3) | TO-247-3 |
| Part Aliases | RGT50NL65D | RGT30NS65D(LPDS) | RGT40NS65D(LPDS) | RGT80TS65D |
| Pd Power Dissipation | 194 W | 133 W | 161 W | 234 W |
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