ROHM RGT40NS65DGTL BJTs
IGBT TRENCH FIELD 650V 40A LPDS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RGT40NS65DGTL
Detailed Description
IGBT TRENCH FIELD 650V 40A LPDS
Package
D2PAK-3 (TO-263-3)
Lifecycle Status
Active
Datasheet
RGT40NS65DGTL Datasheet
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Technical Specifications
ROHM RGT40NS65DGTL BJTs technical specifications.
General
Series
RGT40NS65D
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 40°C ~ + 175°C
Technology
Si
Configuration
Single
Collector Emitter Voltage Vceo Max
650 V
Collector Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
- 30 V, 30 V
Continuous Collector Current at 25 C
40 A
Alternate Parts Comparison (RGT40NS65DGTL vs RGT50NL65DGTL vs RGT80TS65DGC13 vs RGT30NS65DGTL)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Through Hole | SMD/SMT |
| Operating Temperature | - 40°C ~ + 175°C | - 40°C ~ + 175°C | - 40°C ~ + 175°C | - 40°C ~ + 175°C |
| RoHS | Yes | Yes | Yes | Yes |
| Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | 1.65 V | 1.65 V |
| Collector Emitter Voltage Vceo Max | 650 V | 650 V | 650 V | 650 V |
| Configuration | Single | Single | Single | Single |
| Continuous Collector Current at 25 C | 40 A | 48 A | 70 A | 30 A |
| Gate Emitter Leakage Current | +/- 200 nA | 200 nA | 200 nA | +/- 200 nA |
| Maximum Gate Emitter Voltage | - 30 V, 30 V | - 30 V, 30 V | - 30 V, 30 V | - 30 V, 30 V |
| Package | D2PAK-3 (TO-263-3) | TO-263-3 | TO-247-3 | D2PAK-3 |
| Part Aliases | RGT40NS65D(LPDS) | RGT50NL65D | RGT80TS65D | RGT30NS65D(LPDS) |
| Pd Power Dissipation | 161 W | 194 W | 234 W | 133 W |
| Action |
