ROHM R8008ANJFRGTL MOSFETs
MOSFET N-CH 800V 8A LPTS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
R8008ANJFRGTL
Detailed Description
MOSFET N-CH 800V 8A LPTS
Package
D2PAK-3
Lifecycle Status
Active
Datasheet
R8008ANJFRGTL Datasheet
Quick Jump:
Technical Specifications
ROHM R8008ANJFRGTL MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
800 V
ID Continuous Drain Current
8 A
Rds on Drain Source Resistance
1.03 Ohms
Vgs Gate Source Voltage
- 30 V, + 30 V
Alternate Parts Comparison (R8008ANJFRGTL vs RUM002N02T2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55 °C ~ 150 °C |
| Number of Channels | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant |
| Channel Mode | Enhancement | Enhancement |
| Configuration | Single | Single |
| Fall Time | 30 ns | 10 ns |
| Forward Transconductance Min | 2 S | 200 mS |
| Package | D2PAK-3 | SOT-23 |
| Pd Power Dissipation | 195 W | 150 mW |
| Rds on Drain Source Resistance | 1.03 Ohms | 1.2 Ohms |
| Rise Time | 35 ns | 10 ns |
| Action |
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