Renesas ISL6612EIBZ-T Gate Drivers
IC GATE DRVR HALF-BRIDGE 8SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
ISL6612EIBZ-T
Detailed Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Package
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
ISL6612EIBZ-T Datasheet
Quick Jump:
Technical Specifications
Renesas ISL6612EIBZ-T Gate Drivers technical specifications.
General
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
10.8V ~ 13.2V
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Current Peak Output Source Sink
1.25A, 2A
Alternate Parts Comparison (ISL6612EIBZ-T vs ISL89163FBECZ vs ISL89167FBEAZ vs ISL89161FBEBZ)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| Supply Voltage | 10.8V ~ 13.2V | 7.5V ~ 16V | 4.5V ~ 16V | 4.5V ~ 16V |
| Channel Type | Synchronous | Independent | Independent | Independent |
| Current Peak Output Source Sink | 1.25A, 2A | 6A, 6A | 6A, 6A | 6A, 6A |
| Driven Configuration | Half-Bridge | Low-Side | Low-Side | Low-Side |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| Input Type | Non-Inverting | Non-Inverting | Inverting | Inverting |
| Number of Drivers | 2 | 2 | 2 | 2 |
| Rise Fall Time Typ | 26ns, 18ns | 20ns, 20ns | 20ns, 20ns | 20ns, 20ns |
| Logic Voltage - VIL, VIH | -- | 2.4V, 9.6V | 1.22V, 2.08V | 1.85V, 3.15V |
| Action |
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