Renesas HIP6601BECB-T Gate Drivers
IC GATE DRVR HALF-BRIDGE 8SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
HIP6601BECB-T
Detailed Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Package
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
HIP6601BECB-T Datasheet
Quick Jump:
Technical Specifications
Renesas HIP6601BECB-T Gate Drivers technical specifications.
General
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 125°C (TJ)
Supply Voltage
10.8V ~ 13.2V
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
High Side Voltage Max Bootstrap
15 V
Alternate Parts Comparison (HIP6601BECB-T vs HIP2100EIB vs HIP6603BECB-T vs HIP6601BECBZ-T)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 125°C (TJ) | -55°C ~ 150°C (TJ) | 0°C ~ 125°C (TJ) | 0°C ~ 125°C (TJ) |
| Supply Voltage | 10.8V ~ 13.2V | 9V ~ 14V | 10.8V ~ 13.2V | 10.8V ~ 13.2V |
| Channel Type | Synchronous | Independent | Synchronous | Synchronous |
| Driven Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| High Side Voltage Max Bootstrap | 15 V | 114 V | 15 V | 15 V |
| Input Type | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Number of Drivers | 2 | 2 | 2 | 2 |
| Rise Fall Time Typ | 20ns, 20ns | 10ns, 10ns | 20ns, 20ns | 20ns, 20ns |
| Action |
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