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Renesas ISL6612AEIBZ-T Gate Drivers

IC GATE DRVR HALF-BRIDGE 8SOIC

42,414Renesas8-SOIC (0.154", 3.90mm Width) Exposed PadRoHS
ISL6612AEIBZ-T - No Image Available

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ISL6612AEIBZ-T
Manufacturer
Part Number (MPN)
ISL6612AEIBZ-T
Detailed Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Package
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF ISL6612AEIBZ-T Datasheet
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Technical Specifications

Renesas ISL6612AEIBZ-T Gate Drivers technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
10.8V ~ 13.2V
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Current Peak Output Source Sink
1.25A, 2A

Alternate Parts Comparison (ISL6612AEIBZ-T vs ISL89163FBECZ vs ISL89167FBEAZ vs ISL89161FBEBZ)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
Supply Voltage10.8V ~ 13.2V7.5V ~ 16V4.5V ~ 16V4.5V ~ 16V
Channel TypeSynchronousIndependentIndependentIndependent
Current Peak Output Source Sink1.25A, 2A6A, 6A6A, 6A6A, 6A
Driven ConfigurationHalf-BridgeLow-SideLow-SideLow-Side
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
Input TypeNon-InvertingNon-InvertingInvertingInverting
Number of Drivers2222
Rise Fall Time Typ26ns, 18ns20ns, 20ns20ns, 20ns20ns, 20ns
Logic Voltage - VIL, VIH--2.4V, 9.6V1.22V, 2.08V1.85V, 3.15V
Action

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