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Renesas HIP2210FRTZ-T7A Gate Drivers

100V/4A PWM INPUT HALF-BRIDGE DR

10,032 ActiveRenesas10-WDFN Exposed PadRoHS
HIP2210FRTZ-T7A - No Image Available

Same model may have multiple batches, images only for reference.

HIP2210FRTZ-T7A
Manufacturer
Part Number (MPN)
HIP2210FRTZ-T7A
Detailed Description
100V/4A PWM INPUT HALF-BRIDGE DR
Package
10-WDFN Exposed Pad
Key Features
Package / Case: 10-WDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF HIP2210FRTZ-T7A Datasheet
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Technical Specifications

Renesas HIP2210FRTZ-T7A Gate Drivers technical specifications.

General

Package / Case
10-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
6V ~ 18V
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Logic Voltage - VIL, VIH
1.47V, 1.84V

Alternate Parts Comparison (HIP2210FRTZ-T7A vs HIP2210FRTZ vs HIP2211FRTZ vs HIP2210FRTZ-T)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case10-WDFN Exposed Pad10-WDFN Exposed Pad10-WDFN Exposed Pad10-WDFN Exposed Pad
Operating Temperature-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
Supply Voltage6V ~ 18V6V ~ 18V6V ~ 18V6V ~ 18V
Channel TypeSynchronousSynchronousIndependentSynchronous
Current Peak Output Source Sink3A, 4A3A, 4A3A, 4A3A, 4A
Driven ConfigurationHalf-BridgeHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
High Side Voltage Max Bootstrap115 V115 V115 V115 V
Input TypeNon-InvertingNon-InvertingNon-InvertingNon-Inverting
Logic Voltage - VIL, VIH1.47V, 1.84V1.47V, 1.84V1.47V, 1.84V1.47V, 1.84V
Rise Fall Time Typ435ns, 365ns20ns, 20ns20ns, 20ns435ns, 365ns
Action

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