Renesas HIP2122FRTAZ Gate Drivers
IC GATE DRVR HALF-BRIDGE 10TDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
HIP2122FRTAZ
Detailed Description
IC GATE DRVR HALF-BRIDGE 10TDFN
Package
10-WDFN Exposed Pad
Key Features
Package / Case: 10-WDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
HIP2122FRTAZ Datasheet
Quick Jump:
Technical Specifications
Renesas HIP2122FRTAZ Gate Drivers technical specifications.
General
Package / Case
10-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Supply Voltage
8V ~ 14V
Input Type
Inverting
Channel Type
Independent
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Logic Voltage - VIL, VIH
3.7V, 7.93V
Alternate Parts Comparison (HIP2122FRTAZ vs HIP2210FRTZ vs HIP2211FRTZ vs HIP2210FRTZ-T)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 10-WDFN Exposed Pad | 10-WDFN Exposed Pad | 10-WDFN Exposed Pad | 10-WDFN Exposed Pad |
| Operating Temperature | -55°C ~ 150°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| Supply Voltage | 8V ~ 14V | 6V ~ 18V | 6V ~ 18V | 6V ~ 18V |
| Channel Type | Independent | Synchronous | Independent | Synchronous |
| Current Peak Output Source Sink | 2A, 2A | 3A, 4A | 3A, 4A | 3A, 4A |
| Driven Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| High Side Voltage Max Bootstrap | 114 V | 115 V | 115 V | 115 V |
| Input Type | Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Logic Voltage - VIL, VIH | 3.7V, 7.93V | 1.47V, 1.84V | 1.47V, 1.84V | 1.47V, 1.84V |
| Rise Fall Time Typ | 10ns, 10ns | 20ns, 20ns | 20ns, 20ns | 435ns, 365ns |
| Action |
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