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Renesas HIP2210FRTZ Gate Drivers

100V/4A PWM INPUT HALF BRIDGE DR

19,367 ActiveRenesas10-WDFN Exposed PadRoHS
HIP2210FRTZ - No Image Available

Same model may have multiple batches, images only for reference.

HIP2210FRTZ
Manufacturer
Part Number (MPN)
HIP2210FRTZ
Detailed Description
100V/4A PWM INPUT HALF BRIDGE DR
Package
10-WDFN Exposed Pad
Key Features
Package / Case: 10-WDFN Exposed Pad
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF HIP2210FRTZ Datasheet
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Technical Specifications

Renesas HIP2210FRTZ Gate Drivers technical specifications.

General

Package / Case
10-WDFN Exposed Pad
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
6V ~ 18V
Input Type
Non-Inverting
Channel Type
Synchronous
Gate Type
N-Channel MOSFET
Numberof Drivers
2
Rise Fall Time Typ
20ns, 20ns
Driven Configuration
Half-Bridge
Logic Voltage - VIL, VIH
1.47V, 1.84V

Alternate Parts Comparison (HIP2210FRTZ vs HIP2210FRTZ-T vs HIP2122FRTAZ vs HIP2210FRTZ-T7A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case10-WDFN Exposed Pad10-WDFN Exposed Pad10-WDFN Exposed Pad10-WDFN Exposed Pad
Operating Temperature-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 125°C (TJ)
Supply Voltage6V ~ 18V6V ~ 18V8V ~ 14V6V ~ 18V
Channel TypeSynchronousSynchronousIndependentSynchronous
Current Peak Output Source Sink3A, 4A3A, 4A2A, 2A3A, 4A
Driven ConfigurationHalf-BridgeHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
High Side Voltage Max Bootstrap115 V115 V114 V115 V
Input TypeNon-InvertingNon-InvertingInvertingNon-Inverting
Logic Voltage - VIL, VIH1.47V, 1.84V1.47V, 1.84V3.7V, 7.93V1.47V, 1.84V
Rise Fall Time Typ20ns, 20ns435ns, 365ns10ns, 10ns435ns, 365ns
Mounting Type--Surface MountSurface MountSurface Mount
Action

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