Panjit PJX8802_R1_00001 MOSFETs
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PJX8802_R1_00001
Detailed Description
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Package
SOT-563
Lifecycle Status
Active
Datasheet
PJX8802_R1_00001 Datasheet
Quick Jump:
Technical Specifications
Panjit PJX8802_R1_00001 MOSFETs technical specifications.
General
Series
NFET-20TEMN
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
700 mA
Rds on Drain Source Resistance
400 mOhms
Alternate Parts Comparison (PJX8802_R1_00001 vs PJA3441-AU_R1_000A1 vs PJQ4443P_R2_00001 vs PJS6403_S1_00001)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-563 | SOT23-3 | DFN3333-8 | SOT-23-6 |
| Technology | Si | -- | Si | Si |
| Unit Weight | 0.000212 oz | -- | 0.001076 oz | 0.000501 oz |
| ID Continuous Drain Current | 700 mA | -- | -- | 6.4 A |
| Qg Gate Charge | 1.6 nC | -- | -- | 7.8 nC |
| Rds on Drain Source Resistance | 400 mOhms | -- | -- | 37 mOhms |
| Vds Drain Source Breakdown Voltage | 20 V | -- | -- | 30 V |
| Vgs Gate Source Voltage | - 8 V, + 8 V | -- | -- | - 20 V, + 20 V |
| Vgs Th Gate Source Threshold Voltage | 1 V | -- | -- | 2.5 V |
| Series | NFET-20TEMN | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Action |
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