Panjit PJS6403_S1_00001 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PJS6403_S1_00001
Detailed Description
Power Field-Effect Transistor,
Package
SOT-23-6
Lifecycle Status
Active
Datasheet
PJS6403_S1_00001 Datasheet
Quick Jump:
Technical Specifications
Panjit PJS6403_S1_00001 MOSFETs technical specifications.
General
RoHS
Yes
Technology
Si
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
6.4 A
Rds on Drain Source Resistance
37 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Vgs Th Gate Source Threshold Voltage
2.5 V
Qg Gate Charge
7.8 nC
Unit Weight
0.000501 oz
Package
SOT-23-6
Alternate Parts Comparison (PJS6403_S1_00001 vs PJA3441-AU_R1_000A1 vs PJSOT08C-05_R1_00001 vs PJSD12CW_R1_00001)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-23-6 | SOT23-3 | SOT-23-2 | SOD-323 |
| Unit Weight | 0.000501 oz | -- | 0.000296 oz | 0.000145 oz |
| ID Continuous Drain Current | 6.4 A | -- | -- | -- |
| Qg Gate Charge | 7.8 nC | -- | -- | -- |
| Rds on Drain Source Resistance | 37 mOhms | -- | -- | -- |
| Technology | Si | -- | -- | -- |
| Vds Drain Source Breakdown Voltage | 30 V | -- | -- | -- |
| Vgs Gate Source Voltage | - 20 V, + 20 V | -- | -- | -- |
| Vgs Th Gate Source Threshold Voltage | 2.5 V | -- | -- | -- |
| Series | -- | -- | TEA-05MBZ | TEA-04A22 |
| Operating Temperature | -- | -- | - 50°C ~ + 150°C | - 55°C ~ + 125°C |
| Action |
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