Panjit PJW4P06A-AU_R2_000A1 MOSFETs
60V P-CHANNEL ENHANCEMENT MODE M
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PJW4P06A-AU_R2_000A1
Detailed Description
60V P-CHANNEL ENHANCEMENT MODE M
Package
SOT-223-3
Lifecycle Status
Active
Datasheet
PJW4P06A-AU_R2_000A1 Datasheet
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Technical Specifications
Panjit PJW4P06A-AU_R2_000A1 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
4 A
Rds on Drain Source Resistance
110 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (PJW4P06A-AU_R2_000A1 vs PJA3441-AU_R1_000A1 vs PJQ4443P_R2_00001 vs PJA3406_R1_00001)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | -- |
| Package | SOT-223-3 | SOT23-3 | DFN3333-8 | -- |
| Technology | Si | -- | Si | Si |
| Unit Weight | 0.004339 oz | -- | 0.001076 oz | 0.000282 oz |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -55°C ~ 150°C (TJ) |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| ID Continuous Drain Current | 4 A | -- | -- | 4.4 A |
| Pd Power Dissipation | 3.1 W | -- | -- | 1.25 W |
| Qg Gate Charge | 10 nC | -- | -- | 5.8 nC |
| Rds on Drain Source Resistance | 110 mOhms | -- | -- | 48 mOhms |
| Action |
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